SI7157DP-T1-GE3 Vishay Semiconductors
auf Bestellung 26998 Stücke:
Lieferzeit 441-455 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.82 EUR |
16+ | 3.41 EUR |
100+ | 2.65 EUR |
500+ | 2.19 EUR |
1000+ | 1.84 EUR |
3000+ | 1.81 EUR |
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Technische Details SI7157DP-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V.
Weitere Produktangebote SI7157DP-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7157DP-T1-GE3 Produktcode: 148717 |
Verschiedene Bauteile > Other components 3 |
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SI7157DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 625nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7157DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 60A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7157DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 60A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7157DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI7157DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI7157DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 625nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |