Weitere Produktangebote SI7164DP-T1-GE3 nach Preis ab 2.31 EUR bis 6.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7164DP-T1-GE3 | Vishay Semiconductors |
 MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 274 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SI7164DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 1237 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| SI7164DP-T1-GE3 |
|
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7164DP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 20V Vgs PowerPAK SO-8
MOSFETs 60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.44 EUR |
| 10+ | 4.26 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.31 EUR |
| SI7164DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 1237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.58 EUR |
| 10+ | 4.32 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.31 EUR |
| SI7164DP-T1-GE3 |
|
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)