SI7172ADP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.75 EUR |
| 6000+ | 0.7 EUR |
| 9000+ | 0.68 EUR |
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Technische Details SI7172ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 200V PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 125°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.1V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V.
Weitere Produktangebote SI7172ADP-T1-RE3 nach Preis ab 0.81 EUR bis 2.78 EUR
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SI7172ADP-T1-RE3 | Hersteller : Vishay / Siliconix |
MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 14843 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7172ADP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
auf Bestellung 14242 Stücke: Lieferzeit 10-14 Tag (e) |
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