SI7172DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 200V 25A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.99 EUR |
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Technische Details SI7172DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V, Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 100 V.
Weitere Produktangebote SI7172DP-T1-GE3 nach Preis ab 1.94 EUR bis 4.40 EUR
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SI7172DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 20369 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7172DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 25A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 100 V |
auf Bestellung 7461 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7172DP-T1-GE3 | Hersteller : VISHAY |
SI7172DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |