SI7212DN-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1.6V @ 250µA
| Anzahl | Preis |
|---|---|
| 3000+ | 1.9 EUR |
| 6000+ | 1.83 EUR |
| 9000+ | 1.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7212DN-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 1.6V @ 250µA.
Weitere Produktangebote SI7212DN-T1-E3 nach Preis ab 1.24 EUR bis 4.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7212DN-T1-E3 | Vishay Semiconductors |
MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 |
auf Bestellung 8313 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SI7212DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 14310 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SI7212DN-T1-E3 | Vishay / Siliconix |
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 |
auf Bestellung 2602 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SI7212DN-T1-E3 | VISHAY |
09+ |
auf Bestellung 3015 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7212DN-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8
MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8
auf Bestellung 8313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.91 EUR |
| 10+ | 2.55 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.3 EUR |
| 3000+ | 1.24 EUR |
| SI7212DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 14310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.22 EUR |
| 10+ | 3.51 EUR |
| 100+ | 2.79 EUR |
| 500+ | 2.36 EUR |
| 1000+ | 2 EUR |
| SI7212DN-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
auf Bestellung 2602 Stücke:
Lieferzeit 10-14 Tag (e)
| SI7212DN-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 3015 Stücke:
Lieferzeit 21-28 Tag (e)