auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7216DN-T1-E3 Vishay
Description: MOSFET 2N-CH 40V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.8W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7216DN-T1-E3 nach Preis ab 0.8 EUR bis 3.33 EUR
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SI7216DN-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7216DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7216DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 1267 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7216DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 11219 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7216DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SI7216DN-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 20A Power dissipation: 20.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |