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Technische Details SI7216DN-T1-E3 Vishay
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 40V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 20.8W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SI7216DN-T1-E3 nach Preis ab 0.96 EUR bis 5.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI7216DN-T1-E3 | Vishay |
 Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7216DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212 Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 40V Power - Max: 20.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Tape & Reel (TR) |
auf Bestellung 17100 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7216DN-T1-E3 | VISHAY |
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2799 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7216DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 17774 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7216DN-T1-E3 | Vishay Semiconductors |
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 9086 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7216DN-T1-E3 | VISHAY |
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 20.8W Betriebstemperatur, max.: 150°C |
auf Bestellung 2799 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7216DN-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.96 EUR |
| SI7216DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 17100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.19 EUR |
| 9000+ | 1.08 EUR |
| SI7216DN-T1-E3 |
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Hersteller: VISHAY
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.11 EUR |
| 110+ | 1.95 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.44 EUR |
| SI7216DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 17774 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.71 EUR |
| 50+ | 2.05 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.46 EUR |
| SI7216DN-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 9086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.25 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.39 EUR |
| 3000+ | 1.25 EUR |
| SI7216DN-T1-E3 |
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Hersteller: VISHAY
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 20.8W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SI7216DN-T1-E3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 6 A, 0.032 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 20.8W
Betriebstemperatur, max.: 150°C
auf Bestellung 2799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 5.22 EUR |
| 75+ | 3.11 EUR |
| 110+ | 1.95 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.44 EUR |