Produktrezensionen
Produktbewertung abgeben
Technische Details SI7216DN-T1-E3 Vishay
Description: MOSFET 2N-CH 40V 6A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 40V, Power - Max: 20.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7216DN-T1-E3 nach Preis ab 0.81 EUR bis 3.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI7216DN-T1-E3 | Vishay |
Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
SI7216DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 40V Power - Max: 20.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
SI7216DN-T1-E3 | Vishay Semiconductors |
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 1267 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
SI7216DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 11219 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI7216DN-T1-E3 |
![]() |
Hersteller: Vishay
Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET N-CH 40V 6A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.81 EUR |
| SI7216DN-T1-E3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.91 EUR |
| SI7216DN-T1-E3 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 1267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.11 EUR |
| 3000+ | 1.05 EUR |
| SI7216DN-T1-E3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 11219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.33 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.11 EUR |




