SI7220DN-T1-E3 Vishay Semiconductors
auf Bestellung 13362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.94 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.60 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 1.95 EUR |
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Technische Details SI7220DN-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7220DN-T1-E3 nach Preis ab 2.24 EUR bis 6.39 EUR
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SI7220DN-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 60V 3.4A PPAK 1212Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 2142 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7220DN-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 1875 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7220DN-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 5303 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7220DN-T1-E3 | Hersteller : VISHAY |
SI7220DN-T1-E3 SMD N channel transistors |
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SI7220DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
Produkt ist nicht verfügbar |