SI7220DN-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.94 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.6 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 1.95 EUR |
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Technische Details SI7220DN-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7220DN-T1-E3 nach Preis ab 2.24 EUR bis 6.39 EUR
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SI7220DN-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 60V 3.4A PPAK 1212Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A Drain to Source Voltage (Vdss): 60V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 2142 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7220DN-T1-E3 | VISHAY |
09+ |
auf Bestellung 5303 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7220DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.39 EUR |
| 10+ | 4.19 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.24 EUR |
| SI7220DN-T1-E3 |
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Hersteller: VISHAY
09+
09+
auf Bestellung 5303 Stücke:
Lieferzeit 21-28 Tag (e)