SI7232DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
| Anzahl | Preis |
|---|---|
| 3000+ | 0.54 EUR |
| 6000+ | 0.51 EUR |
| 9000+ | 0.47 EUR |
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Technische Details SI7232DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 23W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V, Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7232DN-T1-GE3 nach Preis ab 0.53 EUR bis 1.9 EUR
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SI7232DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 25A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 23W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 11880 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7232DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs PowerPAK 1212-8 |
auf Bestellung 7569 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7232DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 11880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.6 EUR |
| SI7232DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 8V Vgs PowerPAK 1212-8
MOSFETs 20V Vds 8V Vgs PowerPAK 1212-8
auf Bestellung 7569 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.53 EUR |