SI7252ADP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
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Technische Details SI7252ADP-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.6W (Ta), 33.8W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V, Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SI7252ADP-T1-GE3 nach Preis ab 1.34 EUR bis 4.21 EUR
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SI7252ADP-T1-GE3 | Vishay / Siliconix |
MOSFETs PWRPK 100V 28.7A |
auf Bestellung 49684 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7252ADP-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs PWRPK 100V 28.7A
MOSFETs PWRPK 100V 28.7A
auf Bestellung 49684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.21 EUR |
| 10+ | 2.71 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.4 EUR |
| 3000+ | 1.34 EUR |


