SI7252DP-T1-GE3
Produktcode: 122330
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Weitere Produktangebote SI7252DP-T1-GE3 nach Preis ab 1.33 EUR bis 4.4 EUR
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SI7252DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36.7A Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7252DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 44326 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7252DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36.7A Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 25241 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7252DP-T1-GE3 | Hersteller : Vishay Siliconix |
MOSFET 2N-CH 100V 36.7A PPAK 8SO Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |