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Technische Details SI7308DN-T1-GE3 Vishay
Description: MOSFET N-CH 60V 6A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V.
Weitere Produktangebote SI7308DN-T1-GE3 nach Preis ab 0.63 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI7308DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 6A PPAK1212-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7308DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7308DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2792 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7308DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 36238 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7308DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 6A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V |
auf Bestellung 8027 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.82 EUR |
| 6000+ | 0.81 EUR |
| SI7308DN-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 133+ | 1.32 EUR |
| 140+ | 1.25 EUR |
| 157+ | 1.08 EUR |
| 200+ | 1.02 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.8 EUR |
| SI7308DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2792 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 1.95 EUR |
| 111+ | 1.54 EUR |
| 113+ | 1.45 EUR |
| 144+ | 1.09 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.63 EUR |
| SI7308DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 36238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.94 EUR |
| 3000+ | 0.88 EUR |
| 6000+ | 0.86 EUR |
| SI7308DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
auf Bestellung 8027 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 12+ | 1.77 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |