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SI7315DN-T1-GE3

SI7315DN-T1-GE3 Vishay Siliconix


si7315dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.74 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI7315DN-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 150V 8.9A PPAK1212-8, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8.

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SI7315DN-T1-GE3 SI7315DN-T1-GE3 Vishay Siliconix si7315dn.pdf Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
auf Bestellung 3102 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
11+1.72 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SI7315DN-T1-GE3 SI7315DN-T1-GE3 Vishay / Siliconix si7315dn-348601.pdf MOSFET -150V Vds 30V Vgs PowerPAK 1212-8
auf Bestellung 26214 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7315DN-T1-GE3 si7315dn.pdf
SI7315DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
auf Bestellung 3102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.72 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SI7315DN-T1-GE3 si7315dn-348601.pdf
SI7315DN-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8
auf Bestellung 26214 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH