| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.32 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Produktbewertung abgeben
Technische Details SI7336ADP-T1-GE3 Vishay
Description: MOSFET N-CH 30V 30A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 5.4W (Ta), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7336ADP-T1-GE3 nach Preis ab 1.82 EUR bis 9.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI7336ADP-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7336ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5.4W (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7336ADP-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 30A 5.4W 3.0mohm @ 10V |
auf Bestellung 5253 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7336ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 5.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V |
auf Bestellung 7156 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7336ADP-T1-GE3 | VISHAY |
Description: VISHAY - SI7336ADP-T1-GE3 - N CHANNEL MOSFET tariffCode: 85412900 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1V SVHC: Lead Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.003ohm directShipCharge: 25 |
auf Bestellung 2988 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7336ADP-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.32 EUR |
| SI7336ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.4W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.4W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.37 EUR |
| SI7336ADP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 30A 5.4W 3.0mohm @ 10V
MOSFETs 30V 30A 5.4W 3.0mohm @ 10V
auf Bestellung 5253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.22 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.23 EUR |
| 3000+ | 1.86 EUR |
| 6000+ | 1.82 EUR |
| SI7336ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 7156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.5 EUR |
| 10+ | 4.91 EUR |
| 50+ | 3.81 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.88 EUR |
| SI7336ADP-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI7336ADP-T1-GE3 - N CHANNEL MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1V
SVHC: Lead
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.003ohm
directShipCharge: 25
Description: VISHAY - SI7336ADP-T1-GE3 - N CHANNEL MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1V
SVHC: Lead
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.003ohm
directShipCharge: 25
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 9.27 EUR |
| 40+ | 5.89 EUR |
| 50+ | 4.93 EUR |