SI7370DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 9.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.47 EUR |
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Technische Details SI7370DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V.
Weitere Produktangebote SI7370DP-T1-GE3 nach Preis ab 1.92 EUR bis 5.40 EUR
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SI7370DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 46364 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7370DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 9.6A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7370DP-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 2418 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7370DP-T1-GE3 | Hersteller : VISHAY |
SI7370DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |