SI7386DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.93 EUR |
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Technische Details SI7386DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V.
Weitere Produktangebote SI7386DP-T1-GE3 nach Preis ab 0.93 EUR bis 3.57 EUR
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SI7386DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
auf Bestellung 28706 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7386DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 30V 19A 5.0W 7.0mohm @ 10V |
auf Bestellung 13464 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 2135 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7386DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7386DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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| SI7386DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W Kind of package: reel; tape Power dissipation: 5W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 19A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7386DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W Kind of package: reel; tape Power dissipation: 5W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 19A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |