auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.78 EUR |
| 6000+ | 0.73 EUR |
| 9000+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7415DN-T1-E3 Vishay
Description: MOSFET P-CH 60V 3.6A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V.
Weitere Produktangebote SI7415DN-T1-E3 nach Preis ab 0.7 EUR bis 3.77 EUR
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SI7415DN-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 3.6A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
auf Bestellung 81000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 3.6A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
auf Bestellung 84957 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 25121 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7415DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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| SI7415DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -3.6A; Idm: -30A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: -60V Drain current: -3.6A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7415DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -3.6A; Idm: -30A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: -60V Drain current: -3.6A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A |
Produkt ist nicht verfügbar |