SI7423DN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 7.4A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.03 EUR |
| 6000+ | 0.98 EUR |
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Technische Details SI7423DN-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V.
Weitere Produktangebote SI7423DN-T1-E3 nach Preis ab 0.91 EUR bis 3.24 EUR
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SI7423DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 7.4A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V |
auf Bestellung 6557 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7423DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 11.7A 3.8W 18mohm @ 10V |
auf Bestellung 14089 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7423DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -11.7A; Idm: -30A Kind of package: reel; tape Case: PowerPAK® 1212-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Drain current: -11.7A Pulsed drain current: -30A Drain-source voltage: -30V Gate charge: 56nC On-state resistance: 30mΩ Power dissipation: 3.8W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |