SI7423DN-T1-GE3 Vishay Semiconductors
auf Bestellung 16937 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.5 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.1 EUR |
| 3000+ | 0.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7423DN-T1-GE3 Vishay Semiconductors
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -11.7A; Idm: -30A, Kind of package: reel; tape, Case: PowerPAK® 1212-8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Technology: TrenchFET®, Drain current: -11.7A, Pulsed drain current: -30A, Drain-source voltage: -30V, Gate charge: 56nC, On-state resistance: 30mΩ, Power dissipation: 3.8W, Gate-source voltage: ±20V, Polarisation: unipolar.
Weitere Produktangebote SI7423DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SI7423DN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 30V 7.4A PPAK 1212-8 |
Produkt ist nicht verfügbar |
|
| SI7423DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -11.7A; Idm: -30A Kind of package: reel; tape Case: PowerPAK® 1212-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Drain current: -11.7A Pulsed drain current: -30A Drain-source voltage: -30V Gate charge: 56nC On-state resistance: 30mΩ Power dissipation: 3.8W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |