SI7430DP-T1-E3
Produktcode: 173696
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Weitere Produktangebote SI7430DP-T1-E3 nach Preis ab 2.21 EUR bis 7.9 EUR
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SI7430DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 26A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7430DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 26A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7430DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 26A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7430DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 4601 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7430DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 26A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
auf Bestellung 5574 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7430DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 26A; Idm: 50A; 64W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Pulsed drain current: 50A Power dissipation: 64W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
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