auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.83 EUR |
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Technische Details SI7430DP-T1-E3 Vishay
Description: MOSFET N-CH 150V 26A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Power Dissipation (Max): 5.2W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V.
Weitere Produktangebote SI7430DP-T1-E3 nach Preis ab 2.43 EUR bis 6.65 EUR
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SI7430DP-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 150V 26A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7430DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 5517 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7430DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7430DP-T1-E3 Produktcode: 173696
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SI7430DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7430DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 26A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SI7430DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 26A; Idm: 50A; 64W Kind of channel: enhancement Case: PowerPAK® SO8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 43nC On-state resistance: 47mΩ Power dissipation: 64W Drain current: 26A Pulsed drain current: 50A Drain-source voltage: 150V Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |