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SI7439DP-T1-GE3

SI7439DP-T1-GE3 Vishay Siliconix


si7439dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.02 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI7439DP-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 150V 3A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V.

Weitere Produktangebote SI7439DP-T1-GE3 nach Preis ab 3.02 EUR bis 8.29 EUR

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SI7439DP-T1-GE3 SI7439DP-T1-GE3 Hersteller : Vishay Semiconductors si7439dp.pdf MOSFET -150V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 4731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.23 EUR
10+5.24 EUR
25+5.05 EUR
100+4.22 EUR
250+4.10 EUR
500+3.75 EUR
1000+3.20 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI7439DP-T1-GE3 SI7439DP-T1-GE3 Hersteller : Vishay Siliconix si7439dp.pdf Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 6335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.29 EUR
10+5.50 EUR
100+3.92 EUR
500+3.24 EUR
1000+3.02 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI7439DP-T1-GE3 Hersteller : VISHAY si7439dp.pdf SI7439DP-T1-GE3 SMD P channel transistors
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