auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.52 EUR |
| 6000+ | 1.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7461DP-T1-E3 Vishay
Description: MOSFET P-CH 60V 8.6A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V.
Weitere Produktangebote SI7461DP-T1-E3 nach Preis ab 1.46 EUR bis 5.59 EUR
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SI7461DP-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 8.6A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7461DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 8.6A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V |
auf Bestellung 19797 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7461DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 79959 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7461DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7461DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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| SI7461DP-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; 60V; -11.5A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: -11.5A Pulsed drain current: -60A Power dissipation: 3.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7461DP-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; 60V; -11.5A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: -11.5A Pulsed drain current: -60A Power dissipation: 3.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |