SI7461DP-T1-GE3
Produktcode: 196585
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SI7461DP-T1-GE3 nach Preis ab 1.46 EUR bis 5.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SI7461DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 8.6A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7461DP-T1-GE3 | Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-GE3 | Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-GE3 | Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 1757 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: PowerPAK® SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Pulsed drain current: -60A Drain-source voltage: -60V Drain current: -8.6A Gate charge: 0.19µC On-state resistance: 14.5mΩ Power dissipation: 1.2W Gate-source voltage: ±20V |
auf Bestellung 1757 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7461DP-T1-GE3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7461DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 8.6A PPAK SO-8 Drain to Source Voltage (Vdss): 60 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: P-Channel Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V |
auf Bestellung 22843 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7461DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.82 EUR |
| SI7461DP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 52+ | 2.83 EUR |
| 62+ | 2.28 EUR |
| 63+ | 2.17 EUR |
| 100+ | 1.53 EUR |
| SI7461DP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 52+ | 2.83 EUR |
| 62+ | 2.33 EUR |
| 63+ | 2.25 EUR |
| 100+ | 1.62 EUR |
| SI7461DP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
auf Bestellung 1757 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 47+ | 3.15 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.97 EUR |
| SI7461DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PowerPAK® SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Pulsed drain current: -60A
Drain-source voltage: -60V
Drain current: -8.6A
Gate charge: 0.19µC
On-state resistance: 14.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PowerPAK® SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Pulsed drain current: -60A
Drain-source voltage: -60V
Drain current: -8.6A
Gate charge: 0.19µC
On-state resistance: 14.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
auf Bestellung 1757 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.47 EUR |
| 32+ | 2.26 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.46 EUR |
| SI7461DP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.63 EUR |
| 10+ | 3.66 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 2.01 EUR |
| 3000+ | 1.88 EUR |
| SI7461DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Drain to Source Voltage (Vdss): 60 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Drain to Source Voltage (Vdss): 60 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
auf Bestellung 22843 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.68 EUR |
| 10+ | 3.71 EUR |
| 100+ | 2.58 EUR |
| 500+ | 2.1 EUR |
| 1000+ | 1.95 EUR |