SI7463ADP-T1-GE3 Vishay Semiconductors
auf Bestellung 39152 Stücke:
Lieferzeit 999-1013 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 3.17 EUR |
| 19+ | 2.83 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.76 EUR |
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Technische Details SI7463ADP-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 40V 46A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V.
Weitere Produktangebote SI7463ADP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7463ADP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 46A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7463ADP-T1-GE3 Produktcode: 176105 |
IC > IC andere |
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| SI7463ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -46A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 144nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7463ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 46A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V |
Produkt ist nicht verfügbar |
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SI7463ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 46A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SI7463ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -46A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 144nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |