SI7464DP-T1-E3 Vishay
Hersteller: Vishay
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7464DP-T1-E3 Vishay
Description: MOSFET N-CH 200V 1.8A PPAK SO-8, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote SI7464DP-T1-E3 nach Preis ab 1.13 EUR bis 2.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI7464DP-T1-E3 | Vishay |
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SI7464DP-T1-E3 | Vishay |
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SI7464DP-T1-E3 | Vishay |
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI7464DP-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 1.8A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
auf Bestellung 1609 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SI7464DP-T1-E3 |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7464DP-T1-E3 |
|
Hersteller: Vishay
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.34 EUR |
| SI7464DP-T1-E3 |
|
Hersteller: Vishay
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 123+ | 1.44 EUR |
| SI7464DP-T1-E3 |
|
Hersteller: Vishay
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 2.14 EUR |
| 93+ | 1.83 EUR |
| 94+ | 1.75 EUR |
| 108+ | 1.46 EUR |
| 250+ | 1.4 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.13 EUR |
| SI7464DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.48 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.68 EUR |
| SI7464DP-T1-E3 |
|
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)