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SI7465DP-T1-GE3

SI7465DP-T1-GE3 Vishay Siliconix


73113.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.77 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI7465DP-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 60V 3.2A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V.

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SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Siliconix 73113.pdf Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5056 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Semiconductors 73113.pdf MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 29998 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.01 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.93 EUR
3000+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI7465DP-T1-GE3 73113.pdf
SI7465DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SI7465DP-T1-GE3 73113.pdf
SI7465DP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 29998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.01 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.93 EUR
3000+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH