| Anzahl | Privatkunde |
|---|---|
| 214+ | 0.82 EUR |
| 215+ | 0.81 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7613DN-T1-GE3 Vishay
Description: MOSFET P-CH 20V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V, Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V.
Weitere Produktangebote SI7613DN-T1-GE3 nach Preis ab 0.55 EUR bis 3.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SI7613DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 35A PPAK1212-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7613DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2150 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7613DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2150 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7613DN-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 |
auf Bestellung 9754 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7613DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V |
auf Bestellung 25857 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7613DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.84 EUR |
| 6000+ | 0.79 EUR |
| 9000+ | 0.75 EUR |
| 15000+ | 0.71 EUR |
| SI7613DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 192+ | 0.92 EUR |
| 193+ | 0.9 EUR |
| 194+ | 0.88 EUR |
| 217+ | 0.76 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| SI7613DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 1.04 EUR |
| 186+ | 0.92 EUR |
| 187+ | 0.88 EUR |
| 188+ | 0.83 EUR |
| 213+ | 0.71 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.55 EUR |
| SI7613DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 16V Vgs PowerPAK 1212-8
MOSFETs -20V Vds 16V Vgs PowerPAK 1212-8
auf Bestellung 9754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.14 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.8 EUR |
| SI7613DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
auf Bestellung 25857 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.17 EUR |
| 11+ | 2 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.95 EUR |