SI7810DN-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.06 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.63 EUR |
| 250+ | 1.62 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.15 EUR |
| 3000+ | 1.11 EUR |
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Technische Details SI7810DN-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 100V 3.4A PPAK1212-8, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7810DN-T1-E3 nach Preis ab 1.08 EUR bis 3.43 EUR
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SI7810DN-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 3.4A PPAK1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V |
auf Bestellung 2978 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7810DN-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 3.4A PPAK1212-8 Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) |
auf Bestellung 2850 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2850 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| SI7810DN-T1-E3 | VISHAY |
09+ |
auf Bestellung 1658 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7810DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.08 EUR |
| SI7810DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
| SI7810DN-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 1658 Stücke:
Lieferzeit 21-28 Tag (e)