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SI7846DP-T1-GE3

SI7846DP-T1-GE3 Vishay Siliconix

71442.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.23 EUR
100+ 4.72 EUR
500+ 3.88 EUR
1000+ 3.21 EUR
Mindestbestellmenge: 4
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Technische Details SI7846DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 150V 4A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V.

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Preis ohne MwSt
SI7846DP-T1-GE3 SI7846DP-T1-GE3 Hersteller : Vishay / Siliconix 71442.pdf MOSFET 150V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 3128 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.53 EUR
10+ 5.43 EUR
100+ 4.32 EUR
250+ 3.98 EUR
500+ 3.64 EUR
1000+ 3.12 EUR
3000+ 2.91 EUR
Mindestbestellmenge: 8
SI7846DP-T1-GE3 Hersteller : VISHAY 71442.pdf SI7846DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI7846DP-T1-GE3 SI7846DP-T1-GE3 Hersteller : Vishay Siliconix 71442.pdf Description: MOSFET N-CH 150V 4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Produkt ist nicht verfügbar