SI7846DP-T1-GE3 Vishay / Siliconix
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.51 EUR |
| 10+ | 3.5 EUR |
| 100+ | 2.52 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 2.02 EUR |
| 6000+ | 1.92 EUR |
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Technische Details SI7846DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 150V 4A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V.
Weitere Produktangebote SI7846DP-T1-GE3 nach Preis ab 2.57 EUR bis 5.23 EUR
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SI7846DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 150V 4A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7846DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 4A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
Produkt ist nicht verfügbar |
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| SI7846DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 24.5A; Idm: 50A Kind of package: reel; tape Case: PowerPAK® SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 36nC On-state resistance: 50mΩ Power dissipation: 5.2W Gate-source voltage: ±20V Drain current: 24.5A Pulsed drain current: 50A Drain-source voltage: 150V Polarisation: unipolar |
Produkt ist nicht verfügbar |