Produkte > VISHAY SILICONIX > SI7848BDP-T1-E3

SI7848BDP-T1-E3 Vishay Siliconix


si7848bdp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+2.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI7848BDP-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 40V 47A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 4.2W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

Weitere Produktangebote SI7848BDP-T1-E3 nach Preis ab 2.22 EUR bis 6.32 EUR

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SI7848BDP-T1-E3 SI7848BDP-T1-E3 Vishay Siliconix si7848bdp.pdf Description: MOSFET N-CH 40V 47A PPAK SO-8
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
auf Bestellung 29237 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+2.76 EUR
100+2.53 EUR
500+2.39 EUR
1000+2.22 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7848BDP-T1-E3 SI7848BDP-T1-E3 Vishay Semiconductors si7848bdp.pdf MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 22956 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.32 EUR
10+4.17 EUR
100+2.92 EUR
500+2.43 EUR
3000+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI7848BDP-T1-E3 si7848bdp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
auf Bestellung 29237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.19 EUR
10+2.76 EUR
100+2.53 EUR
500+2.39 EUR
1000+2.22 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7848BDP-T1-E3 si7848bdp.pdf
Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 22956 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+6.32 EUR
10+4.17 EUR
100+2.92 EUR
500+2.43 EUR
3000+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH