SI7884BDP-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 3+ | 6.05 EUR |
| 10+ | 3.97 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.49 EUR |
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Technische Details SI7884BDP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7884BDP-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| SI7884BDP-T1-E3 | Vishay |
2010 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7884BDP-T1-E3 |
|
Hersteller: Vishay
2010
2010
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)