auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7898DP-T1-E3 Vishay
Description: MOSFET N-CH 150V 3A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V.
Weitere Produktangebote SI7898DP-T1-E3 nach Preis ab 1.03 EUR bis 3.54 EUR
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SI7898DP-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7898DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 3A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7898DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7898DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7898DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 3A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
auf Bestellung 11289 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7898DP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 46862 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7898DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7898DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 4.8A; Idm: 25A; 5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.8A Pulsed drain current: 25A Power dissipation: 5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7898DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 4.8A; Idm: 25A; 5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.8A Pulsed drain current: 25A Power dissipation: 5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |