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Technische Details SI7898DP-T1-E3 Vishay
Description: MOSFET N-CH 150V 3A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V.
Weitere Produktangebote SI7898DP-T1-E3 nach Preis ab 1.21 EUR bis 4.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI7898DP-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 150V 3A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7898DP-T1-E3 | Vishay |
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7898DP-T1-E3 | Vishay |
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7898DP-T1-E3 | Vishay |
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7898DP-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 3A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
auf Bestellung 12300 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7898DP-T1-E3 | Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 23686 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7898DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.32 EUR |
| 6000+ | 1.31 EUR |
| SI7898DP-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.38 EUR |
| SI7898DP-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 2.93 EUR |
| 67+ | 2.53 EUR |
| 100+ | 2 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.38 EUR |
| SI7898DP-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 2.93 EUR |
| 67+ | 2.44 EUR |
| 100+ | 1.89 EUR |
| 250+ | 1.69 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.21 EUR |
| SI7898DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 12300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.61 EUR |
| SI7898DP-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 23686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.63 EUR |
| 3000+ | 1.55 EUR |