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SI7898DP-T1-GE3

SI7898DP-T1-GE3 Vishay Siliconix

si7898dp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI7898DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 150V 3A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V.

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SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix si7898dp.pdf Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 10659 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
10+2.87 EUR
100+1.98 EUR
500+1.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Semiconductors si7898dp.pdf MOSFETs 150V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 4888 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.8 EUR
10+3.12 EUR
100+2.15 EUR
500+1.74 EUR
1000+1.68 EUR
3000+1.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI7898DP-T1-GE3 si7898dp.pdf
SI7898DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 10659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+2.87 EUR
100+1.98 EUR
500+1.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI7898DP-T1-GE3 si7898dp.pdf
SI7898DP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 4888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.8 EUR
10+3.12 EUR
100+2.15 EUR
500+1.74 EUR
1000+1.68 EUR
3000+1.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH