SI7904BDN-T1-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.08 EUR |
| 3000+ | 1 EUR |
| 6000+ | 0.96 EUR |
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Technische Details SI7904BDN-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 20V 6A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 17.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7904BDN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SI7904BDN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 20V 6A PPAK 1212Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V Power - Max: 17.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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|
SI7904BDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A PPAK 1212 Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V Power - Max: 17.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI7904BDN-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI7904BDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SI7904BDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI7904BDN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH