SI7922DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.39 EUR |
| 9000+ | 1.27 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Produktbewertung abgeben
Technische Details SI7922DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SI7922DN-T1-GE3 nach Preis ab 1.51 EUR bis 4.82 EUR
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SI7922DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212 Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 3.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 100V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 29392 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7922DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 7272 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI7922DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 29392 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.8 EUR |
| 10+ | 3.08 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.69 EUR |
| SI7922DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 7272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 2.37 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.63 EUR |
| 3000+ | 1.51 EUR |