SI7923DN-T1-E3 Vishay Semiconductors
auf Bestellung 6797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.90 EUR |
| 100+ | 1.61 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.18 EUR |
| 3000+ | 1.14 EUR |
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Technische Details SI7923DN-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 30V 4.3A 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SI7923DN-T1-E3 nach Preis ab 1.31 EUR bis 2.68 EUR
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SI7923DN-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2P-CH 30V 4.3A 1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 1251 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7923DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R |
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| SI7923DN-T1-E3 | Hersteller : VISHAY |
SI7923DN-T1-E3 Multi channel transistors |
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SI7923DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.3A 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |