SI7946ADP-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 150V; 7.7A; Idm: 10A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 19.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7946ADP-T1-GE3 VISHAY
Description: MOSFET 2N-CH 150V 7.7A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 19.8W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V, Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SI7946ADP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI7946ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 150V 7.7A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19.8W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
||
 |
SI7946ADP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 150V Vds 20V Vgs PowerPAK SO-8 |
Produkt ist nicht verfügbar |
|
| SI7946ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 150V; 7.7A; Idm: 10A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 7.7A Pulsed drain current: 10A Power dissipation: 19.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 256mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |