Si7972DP-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| 3000+ | 0.73 EUR |
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Technische Details Si7972DP-T1-GE3 Vishay Semiconductors
Description: MOSFET 2 N-CH 30V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 22W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V, Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote Si7972DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| Si7972DP-T1-GE3 | Vishay Siliconix |
 MOSFET 60V Vds 20V Vgs PowerPAK SO-8 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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Si7972DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2 N-CH 30V POWERPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 22W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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Si7972DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2 N-CH 30V POWERPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 22W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| Si7972DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 8A; Idm: 40A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: PowerPAK® SO8 Technology: TrenchFET® Polarisation: unipolar Gate charge: 23nC On-state resistance: 21mΩ Drain current: 8A Gate-source voltage: ±20V Power dissipation: 22W Pulsed drain current: 40A Drain-source voltage: 60V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| Si7972DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
MOSFET 60V Vds 20V Vgs PowerPAK SO-8 Транзистори
MOSFET 60V Vds 20V Vgs PowerPAK SO-8 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Si7972DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Si7972DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 22W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 22W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Si7972DP-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 8A; Idm: 40A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: PowerPAK® SO8
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 21mΩ
Drain current: 8A
Gate-source voltage: ±20V
Power dissipation: 22W
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 8A; Idm: 40A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: PowerPAK® SO8
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 21mΩ
Drain current: 8A
Gate-source voltage: ±20V
Power dissipation: 22W
Pulsed drain current: 40A
Drain-source voltage: 60V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH