auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI8409DB-T1-E1 Vishay
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V.
Weitere Produktangebote SI8409DB-T1-E1 nach Preis ab 0.59 EUR bis 2.59 EUR
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SI8409DB-T1-E1 | Hersteller : Vishay |
 Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
auf Bestellung 982 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
auf Bestellung 982 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
auf Bestellung 7976 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 |
auf Bestellung 18430 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI8409DB-T1-E1 | Hersteller : VISHAY |
09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8409DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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| SI8409DB-T1-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 65mΩ Pulsed drain current: -25A Drain current: -6.3A Polarisation: unipolar Gate charge: 26nC Drain-source voltage: -30V Gate-source voltage: ±12V Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI8409DB-T1-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 65mΩ Pulsed drain current: -25A Drain current: -6.3A Polarisation: unipolar Gate charge: 26nC Drain-source voltage: -30V Gate-source voltage: ±12V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |