| Anzahl | Privatkunde |
|---|---|
| 229+ | 0.77 EUR |
| 232+ | 0.75 EUR |
| 236+ | 0.71 EUR |
| 250+ | 0.69 EUR |
| 500+ | 0.67 EUR |
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Technische Details SI8409DB-T1-E1 Vishay
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V.
Weitere Produktangebote SI8409DB-T1-E1 nach Preis ab 0.6 EUR bis 3.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI8409DB-T1-E1 | Vishay |
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
auf Bestellung 982 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8409DB-T1-E1 | Vishay |
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8409DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 4.6A 4MICROFOOTPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8409DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 4.6A 4MICROFOOTPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
auf Bestellung 5103 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8409DB-T1-E1 | Vishay Semiconductors |
MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 |
auf Bestellung 5450 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8409DB-T1-E1 | VISHAY |
09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI8409DB-T1-E1 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
auf Bestellung 982 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 225+ | 0.79 EUR |
| 229+ | 0.74 EUR |
| 232+ | 0.7 EUR |
| 236+ | 0.67 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.6 EUR |
| SI8409DB-T1-E1 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 205+ | 0.86 EUR |
| SI8409DB-T1-E1 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.88 EUR |
| SI8409DB-T1-E1 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
auf Bestellung 5103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
| SI8409DB-T1-E1 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
auf Bestellung 5450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.17 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.89 EUR |
| 6000+ | 0.83 EUR |
| SI8409DB-T1-E1 |
![]() |
Hersteller: VISHAY
09+
09+
auf Bestellung 3018 Stücke:
Lieferzeit 21-28 Tag (e)




