Si8410DB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 4-Micro Foot (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.71 EUR |
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Technische Details Si8410DB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: 4-Micro Foot (1x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V.
Weitere Produktangebote Si8410DB-T2-E1 nach Preis ab 0.69 EUR bis 2.06 EUR
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Si8410DB-T2-E1 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 |
auf Bestellung 25307 Stücke: Lieferzeit 10-14 Tag (e) |
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Si8410DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 4-Micro Foot (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V |
auf Bestellung 5890 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8410DB-T2-E1 | Hersteller : VISHAY |
Description: VISHAY - SI8410DB-T2-E1 - MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 5.7 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - Unlimited Verlustleistung Pd: 1.8 Bauform - Transistor: TrenchFET Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 4 Produktpalette: - Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 0.03 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 850 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
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| Si8410DB-T2-E1 | Hersteller : VISHAY |
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