SI8457DB-T1-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SI8457DB-T1-E1 Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 4-MICRO FOOT® (1.6x1.6), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI8457DB-T1-E1 nach Preis ab 0.4 EUR bis 1.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI8457DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 4MICRO FOOTPackaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (1.6x1.6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V |
auf Bestellung 5409 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SI8457DB-T1-E1 | Vishay Semiconductors |
MOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6 |
auf Bestellung 3819 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI8457DB-T1-E1 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 5409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 20+ | 0.9 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| SI8457DB-T1-E1 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6
MOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6
auf Bestellung 3819 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.41 EUR |


