| Anzahl | Privatkunde |
|---|---|
| 381+ | 0.46 EUR |
| 434+ | 0.4 EUR |
| 443+ | 0.39 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.27 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
381 Stücke
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Produktbewertung abgeben
Technische Details SI8457DB-T1-E1 Vishay
Description: MOSFET P-CH 12V 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-MICRO FOOT® (1.6x1.6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V.
Weitere Produktangebote SI8457DB-T1-E1 nach Preis ab 0.24 EUR bis 2.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI8457DB-T1-E1 | Vishay |
 Trans MOSFET P-CH 12V 10.2A 4-Pin Micro Foot T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8457DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 4MICRO FOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (1.6x1.6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8457DB-T1-E1 | Vishay Semiconductors |
MOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6 |
auf Bestellung 3795 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8457DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 4MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (1.6x1.6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V |
auf Bestellung 4922 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI8457DB-T1-E1 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 10.2A 4-Pin Micro Foot T/R
Trans MOSFET P-CH 12V 10.2A 4-Pin Micro Foot T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 356+ | 0.5 EUR |
| 378+ | 0.45 EUR |
| 381+ | 0.43 EUR |
| 434+ | 0.37 EUR |
| 443+ | 0.35 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.24 EUR |
| SI8457DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.54 EUR |
| SI8457DB-T1-E1 |
|
Hersteller: Vishay Semiconductors
MOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6
MOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6
auf Bestellung 3795 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.52 EUR |
| 6000+ | 0.49 EUR |
| SI8457DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 4922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.15 EUR |
| 16+ | 1.36 EUR |
| 50+ | 1 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |