SI8466EDB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
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Technische Details SI8466EDB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V.
Weitere Produktangebote SI8466EDB-T2-E1 nach Preis ab 0.44 EUR bis 1.17 EUR
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SI8466EDB-T2-E1 | Hersteller : Vishay Semiconductors |
MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1 |
auf Bestellung 4253 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8466EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V |
auf Bestellung 4012 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI8466EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 5.4A On-state resistance: 90mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI8466EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Drain-source voltage: 8V Drain current: 5.4A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |