Weitere Produktangebote SI8466EDB-T2-E1 nach Preis ab 0.33 EUR bis 0.44 EUR
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SI8466EDB-T2-E1 | Hersteller : Vishay Semiconductors |
 MOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1 |
auf Bestellung 5718 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8466EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI8466EDB-T2-E1 | Hersteller : Vishay Siliconix |
N-канальний ПТ, Udss, В = 8, Id = 3,6, Ciss, пФ @ Uds, В = 710 @ 4, Qg, нКл = 13, Rds = 43 мОм, Ugs(th) = 0,7 В, Р, Вт = 0,7, Тексп, °C = -55...+105, Тип монт. = smd,... Група товару: Транзистори Корпус: UFBGA-4 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 75 Stücke: |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8466EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V |
Produkt ist nicht verfügbar |