Weitere Produktangebote SI8466EDB-T2-E1 nach Preis ab 0.33 EUR bis 0.44 EUR
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SI8466EDB-T2-E1 | Vishay Semiconductors |
 MOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1 |
auf Bestellung 5718 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8466EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 700mV @ 250µA Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| SI8466EDB-T2-E1 | Vishay Siliconix |
N-канальний ПТ, Udss, В = 8, Id = 3,6, Ciss, пФ @ Uds, В = 710 @ 4, Qg, нКл = 13, Rds = 43 мОм, Ugs(th) = 0,7 В, Р, Вт = 0,7, Тексп, °C = -55...+105, Тип монт. = smd,... Транзистори Корпус: UFBGA-4 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 75 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| SI8466EDB-T2-E1 |
|
Hersteller: Vishay Semiconductors
MOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1
MOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1
auf Bestellung 5718 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 0.44 EUR |
| 10+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| SI8466EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Description: MOSFET N-CH 8V 4MICROFOOT
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SI8466EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
N-канальний ПТ, Udss, В = 8, Id = 3,6, Ciss, пФ @ Uds, В = 710 @ 4, Qg, нКл = 13, Rds = 43 мОм, Ugs(th) = 0,7 В, Р, Вт = 0,7, Тексп, °C = -55...+105, Тип монт. = smd,... Транзистори Корпус: UFBGA-4 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
N-канальний ПТ, Udss, В = 8, Id = 3,6, Ciss, пФ @ Uds, В = 710 @ 4, Qg, нКл = 13, Rds = 43 мОм, Ugs(th) = 0,7 В, Р, Вт = 0,7, Тексп, °C = -55...+105, Тип монт. = smd,... Транзистори Корпус: UFBGA-4 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 75 Stücke:
Im Einkaufswagen
Stück im Wert von UAH