SI8466EDB-T2-E1 Vishay Semiconductors
auf Bestellung 1543 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
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Technische Details SI8466EDB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 8V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V.
Weitere Produktangebote SI8466EDB-T2-E1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI8466EDB-T2-E1 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 8V 4MICROFOOTPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8466EDB-T2-E1 Produktcode: 209156
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8466EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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| SI8466EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 5.4A Pulsed drain current: 20A Power dissipation: 1.8W Gate-source voltage: ±5V On-state resistance: 90mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8466EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V |
Produkt ist nicht verfügbar |
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| SI8466EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 5.4A Pulsed drain current: 20A Power dissipation: 1.8W Gate-source voltage: ±5V On-state resistance: 90mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |