auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
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Technische Details SI8487DB-T1-E1 Vishay
Description: MOSFET P-CH 30V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V, Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V.
Weitere Produktangebote SI8487DB-T1-E1 nach Preis ab 0.3 EUR bis 1.6 EUR
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SI8487DB-T1-E1 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8487DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8487DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8487DB-T1-E1 | Hersteller : Vishay Semiconductors |
MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 |
auf Bestellung 802 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8487DB-T1-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V |
auf Bestellung 2697 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8487DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI8487DB-T1-E1 | Hersteller : VISHAY |
SI8487DB-T1-E1 SMD P channel transistors |
auf Bestellung 885 Stücke: Lieferzeit 7-14 Tag (e) |
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SI8487DB-T1-E1 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8487DB-T1-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V |
Produkt ist nicht verfügbar |