SI8489EDB-T2-E1 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
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Technische Details SI8489EDB-T2-E1 Vishay Semiconductors
Description: MOSFET P-CH 20V 4MICROFOOT, Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: 4-Microfoot, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI8489EDB-T2-E1 nach Preis ab 0.38 EUR bis 1.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI8489EDB-T2-E1 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 4MICROFOOTOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 2642 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8489EDB-T2-E1 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 20V 4MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2642 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 25+ | 0.84 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.38 EUR |