SI8489EDB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
auf Bestellung 4861 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
29+ | 0.92 EUR |
100+ | 0.64 EUR |
500+ | 0.5 EUR |
1000+ | 0.41 EUR |
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Technische Details SI8489EDB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V.
Weitere Produktangebote SI8489EDB-T2-E1 nach Preis ab 0.35 EUR bis 1.09 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SI8489EDB-T2-E1 | Hersteller : Vishay Semiconductors | MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 |
auf Bestellung 15584 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8489EDB-T2-E1 | Hersteller : Vishay | Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8489EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8489EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI8489EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar |
Produkt ist nicht verfügbar |