| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details SI8489EDB-T2-E1 Vishay
Description: MOSFET P-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V.
Weitere Produktangebote SI8489EDB-T2-E1 nach Preis ab 0.25 EUR bis 1.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI8489EDB-T2-E1 | Vishay |
 Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8489EDB-T2-E1 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1 |
auf Bestellung 9402 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8489EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V |
auf Bestellung 1756 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8489EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V |
auf Bestellung 1510 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1510 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI8489EDB-T2-E1 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| SI8489EDB-T2-E1 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1
MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1
auf Bestellung 9402 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| SI8489EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
auf Bestellung 1756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 21+ | 1.02 EUR |
| 50+ | 0.75 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| SI8489EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)