SI8499DB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.34 EUR |
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Technische Details SI8499DB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.
Weitere Produktangebote SI8499DB-T2-E1 nach Preis ab 0.33 EUR bis 1.41 EUR
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SI8499DB-T2-E1 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 |
auf Bestellung 4740 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8499DB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 20V 16A 6MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 6-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-Micro Foot™ (1.5x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
auf Bestellung 11900 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI8499DB-T2-E1 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs MICRO FOOT 1.5 x 1
MOSFETs -20V Vds 12V Vgs MICRO FOOT 1.5 x 1
auf Bestellung 4740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.89 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| SI8499DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |