SI8499DB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.53 EUR |
| 6000+ | 0.51 EUR |
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Technische Details SI8499DB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.
Weitere Produktangebote SI8499DB-T2-E1 nach Preis ab 0.5 EUR bis 1.6 EUR
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SI8499DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 16A 6MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 6-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-Micro Foot™ (1.5x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
auf Bestellung 8505 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8499DB-T2-E1 | Hersteller : Vishay Semiconductors |
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| SI8499DB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -16A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 30nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
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| SI8499DB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -16A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 30nC Polarisation: unipolar |
Produkt ist nicht verfügbar |