SI8800EDB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.29 EUR |
| 15000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI8800EDB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V.
Weitere Produktangebote SI8800EDB-T2-E1 nach Preis ab 0.27 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI8800EDB-T2-E1 | Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 |
auf Bestellung 8650 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI8800EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V |
auf Bestellung 20418 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SI8800EDB-T2-E1 | VISHAY |
Description: VISHAY - SI8800EDB-T2-E1 - MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4 tariffCode: 0 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SI8800EDB-T2-E1 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
MOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
auf Bestellung 8650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.02 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.27 EUR |
| SI8800EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
auf Bestellung 20418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 24+ | 0.88 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |
| SI8800EDB-T2-E1 |
|
Hersteller: VISHAY
Description: VISHAY - SI8800EDB-T2-E1 - MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4
tariffCode: 0
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Description: VISHAY - SI8800EDB-T2-E1 - MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4
tariffCode: 0
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 171+ | 1.46 EUR |
| 276+ | 0.84 EUR |
| 336+ | 0.64 EUR |
| 430+ | 0.5 EUR |
| 488+ | 0.44 EUR |
| 565+ | 0.38 EUR |
| 1000+ | 0.35 EUR |