SI8808DB-T2-E1 Vishay Semiconductors
auf Bestellung 5792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
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Technische Details SI8808DB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 30V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V.
Weitere Produktangebote SI8808DB-T2-E1 nach Preis ab 0.32 EUR bis 1 EUR
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SI8808DB-T2-E1 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 4MICROFOOTPackaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
auf Bestellung 2341 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8808DB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R |
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SI8808DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
Produkt ist nicht verfügbar |