SI8808DB-T2-E1 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
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Technische Details SI8808DB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 30V 4MICROFOOT, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: 4-Microfoot, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI8808DB-T2-E1 nach Preis ab 0.32 EUR bis 1 EUR
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SI8808DB-T2-E1 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 4MICROFOOTInput Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Cut Tape (CT) |
auf Bestellung 2341 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8808DB-T2-E1 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 4MICROFOOT
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
auf Bestellung 2341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 27+ | 0.68 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |