SI8808DB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| 9000+ | 0.27 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI8808DB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V.
Weitere Produktangebote SI8808DB-T2-E1 nach Preis ab 0.18 EUR bis 1.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI8808DB-T2-E1 | Vishay Semiconductors |
MOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 |
auf Bestellung 5792 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8808DB-T2-E1 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
auf Bestellung 23800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8808DB-T2-E1 | Vishay |
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R |
auf Bestellung 2005 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI8808DB-T2-E1 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
MOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
auf Bestellung 5792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.05 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
| SI8808DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 23800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 25+ | 0.86 EUR |
| 50+ | 0.62 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| SI8808DB-T2-E1 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R
auf Bestellung 2005 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 630+ | 0.29 EUR |
| 650+ | 0.26 EUR |
| 656+ | 0.25 EUR |
| 688+ | 0.23 EUR |
| 730+ | 0.2 EUR |
| 1000+ | 0.18 EUR |