SI8808DB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
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Technische Details SI8808DB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V.
Weitere Produktangebote SI8808DB-T2-E1 nach Preis ab 0.3 EUR bis 1.04 EUR
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SI8808DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
auf Bestellung 7921 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8808DB-T2-E1 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 |
auf Bestellung 17143 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8808DB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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| SI8808DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.5A; Idm: 10A On-state resistance: 0.165Ω Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI8808DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.5A; Idm: 10A On-state resistance: 0.165Ω Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |