SI8812DB-T2-E1 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 4+ | 0.79 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
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Technische Details SI8812DB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.
Weitere Produktangebote SI8812DB-T2-E1 nach Preis ab 0.27 EUR bis 0.83 EUR
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SI8812DB-T2-E1 | Vishay Siliconix |
 Description: MOSFET N-CH 20V 4MICROFOOTGate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Cut Tape (CT) |
auf Bestellung 2683 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8812DB-T2-E1 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.27 EUR |