SI8812DB-T2-E1 Vishay Semiconductors
auf Bestellung 4781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.79 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
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Technische Details SI8812DB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.
Weitere Produktangebote SI8812DB-T2-E1 nach Preis ab 0.27 EUR bis 0.83 EUR
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SI8812DB-T2-E1 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 4MICROFOOTPackaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V |
auf Bestellung 2683 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8812DB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.2A 4-Pin Micro Foot T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8812DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V |
Produkt ist nicht verfügbar |
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| SI8812DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Case: MICROFOOT® Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 17nC On-state resistance: 93mΩ Power dissipation: 0.9W Drain current: 3.2A Gate-source voltage: ±8V Pulsed drain current: 20A Drain-source voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |