SI8816EDB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Produktrezensionen
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Technische Details SI8816EDB-T2-E1 Vishay Siliconix
Description: VISHAY - SI8816EDB-T2-E1 - Leistungs-MOSFET, n-Kanal, 30 V, 2.3 A, 0.087 ohm, MICRO FOOT, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30, Dauer-Drainstrom Id: 2.3, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 900, Gate-Source-Schwellenspannung, max.: 600, Verlustleistung: 900, Bauform - Transistor: MICRO FOOT, Anzahl der Pins: 4, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.087, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.087, SVHC: No SVHC (15-Jun-2015).
Weitere Produktangebote SI8816EDB-T2-E1 nach Preis ab 0.23 EUR bis 1.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI8816EDB-T2-E1 | Vishay / Siliconix |
MOSFETs 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 |
auf Bestellung 4243 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8816EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOTPackaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V |
auf Bestellung 4753 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8816EDB-T2-E1 | Vishay |
Trans MOSFET N-CH 30V 2.3A 4-Pin Micro Foot T/R |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI8816EDB-T2-E1 |
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Hersteller: Vishay / Siliconix
MOSFETs 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
MOSFETs 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
auf Bestellung 4243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.95 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| SI8816EDB-T2-E1 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
auf Bestellung 4753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| SI8816EDB-T2-E1 |
![]() |
Hersteller: Vishay
Trans MOSFET N-CH 30V 2.3A 4-Pin Micro Foot T/R
Trans MOSFET N-CH 30V 2.3A 4-Pin Micro Foot T/R
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)


