SI8819EDB-T2-E1 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.18 EUR |
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Technische Details SI8819EDB-T2-E1 Vishay Semiconductors
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT, Package / Case: 4-XFBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote SI8819EDB-T2-E1 nach Preis ab 0.21 EUR bis 0.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI8819EDB-T2-E1 | Vishay Siliconix |
 Description: MOSFET P-CH 12V 2.9A 4MICRO FOOTPackage / Case: 4-XFBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8819EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V |
auf Bestellung 5800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI8819EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| SI8819EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
auf Bestellung 5800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |